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PBSS4112PAN Power Mosfet Transistor NPN/NPN low VCEsat (BISS) transistor

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PBSS4112PAN Power Mosfet Transistor NPN/NPN low VCEsat (BISS) transistor

: Large Image : PBSS4112PAN Power Mosfet Transistor NPN/NPN low VCEsat (BISS) transistor

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	PBSS4112PAN

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	7900pcs

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Detailed Product Description

Collector-base Voltage:	120 V	Collector-emitter Voltage:	120 V
Emitter-base Voltage:	7 V	Collector Current:	1 A
Peak Collector Current:	1.5 A	Base Current:	0.3 A
High Light:	multi emitter transistor , silicon power transistors

PBSS4112PAN

120 V, 1 A NPN/NPN low VCEsat (BISS) transistor

General description

NPN/NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.

Features and benefits

• Very low collector-emitter saturation voltage V_CEsat

• High collector current capability I_C and I_CM

• High collector current gain h_FE at high I_C

• Reduced Printed-Circuit Board (PCB) requirements

• High energy efficiency due to less heat generation

• AEC-Q101 qualified

Applications

• Load switch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions		Min	Max	Unit
Per transistor
V_CBO	collector-base voltage	open emitter		-	120	V
V_CEO	collector-emitter voltage	open base		-	120	V
V_EBO	emitter-base voltage	open collector		-	7	V
I_C	collector current			-	1	A
I_CM	peak collector current	single pulse; t_p ≤ 1 ms		-	1.5	A
I_B	base current			-	0.3	A
I_BM	peak base current	single pulse; t_p ≤ 1 ms		-	1	A
P_tot	total power dissipation	Tamb ≤ 25 °C	[1] [2] [3] [4] [5] [6] [7] [8]	- - - - - - - -	370 570 530 700 450 760 700 1450	mW mW mW mW mW mW mW mW
Per device
P_tot	total power dissipation	Tamb ≤ 25 °C	[1] [2] [3] [4] [5] [6] [7] [8]	- - - - - - - -	510 780 730 960 620 1040 960 2000	mW mW mW mW mW mW mW mW
Tj	junction temperature			-	150	°C
Tamb	ambient temperature			-55	150	°C
Tstg	storage temperature			-65	150	°C

[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.

[4] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.

[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.

[8] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

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